2層プロセス用下層レジストBLX-210
特徴
業界汎用品と比べ塗布量の削減
品質安定性(経時パーティクル発生量を削減)
低温ベーク(125℃~160℃ベーク)
容易なアンダーカットのコントロール
良好な剥離性
容易にEBRクリーニングが可能
Process | Condition | |
---|---|---|
Under layer |
Substrate | 5inch Bare Si wafer |
Coating materials | BLX-210 | |
Coating method | Spin coating | |
Pre-baking | 125 - 165℃, 120s on Hotplate | |
Film thickness | 0.2 - 0.8μm | |
Upper layer |
Coating material | Positive type of Photoresist |
Coating method | Spin coating | |
Prebaking | 90℃, 90s on Hotplate | |
Film thickness | 0.8μm | |
Double layer |
Exposure | NSR-TFHi12, (i-line stepper), NA=0.45, σ=0.6 |
Development | 2.38%TMAH, 23℃, 30 - 70s, Single Puddle |
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Spin curve
Product Range
Film Thickness Uniformity
uneven coating
Dropping volume | 2cc | 3cc |
---|---|---|
BLX |
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in-plane film thickness uniformity
Dropping volume | 2cc | 3cc |
---|---|---|
BLX |
[Average film thickness] 8,071Å 【σ】12.9Å |
[Average film thickness] 7,858Å 【σ】9.9Å |
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①Under-Layer thickness
②Pre-bake Temperature
③Development time
Pre-bake Temp. VS Removability
Sample | Dissolution rate for NMP (Å/s) | |
---|---|---|
180℃ bake | 140℃ bake | |
BLX | 7.6 | 27.9 |
Other maker product | 8.0 | N/A |
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Case: under-layer thickness = 2,500Å
Sample | Complete dissolution time for NMP (s) | |
---|---|---|
180℃ bake | 140℃ bake | |
BLX | 329 | 90 |
Other maker product | 312 | N/A |
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*Competitor's products cause intermixing with the upper layer during low temperature baking , and cannot be remove or be disolved.