Under Layer for Bi-Layer ProcessBLX-210
Features
Reduced coating volume (good application).
Reduced defects (low solvent volatility suppresses particles during application).
Low temperature baking (no intermixing during baking below 140℃).
Good undercut adjustment (easy adjustment with development time).
Good peelability (low-temperature baking ensures good peelability).
Good EBR cleaning
| Process | Condition | |
|---|---|---|
| Under layer |
Substrate | 5inch Bare Si wafer |
| Coating materials | BLX-210 | |
| Coating method | Spin coating | |
| Pre-baking | 125 - 165℃, 120s on Hotplate | |
| Film thickness | 0.2 - 0.8μm | |
| Upper layer |
Coating material | Positive type of Photoresist |
| Coating method | Spin coating | |
| Prebaking | 90℃, 90s on Hotplate | |
| Film thickness | 0.8μm | |
| Double layer |
Exposure | NSR-TFHi12, (i-line stepper), NA=0.45, σ=0.6 |
| Development | 2.38%TMAH, 23℃, 30 - 70s, Single Puddle |
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Spin curve
Product Range
Film Thickness Uniformity
uneven coating
| Dropping volume | 2cc | 3cc |
|---|---|---|
| BLX | ![]() |
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in-plane film thickness uniformity
| Dropping volume | 2cc | 3cc |
|---|---|---|
| BLX |
[Average film thickness] 8,071Å【σ】12.9Å |
[Average film thickness] 7,858Å【σ】9.9Å |
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①Under-Layer thickness
-
0.2μm
-
0.4μm
-
0.6μm
-
0.8μm
②Pre-bake Temperature
-
125℃
-
135℃
-
145℃
-
155℃
-
165℃
③Development time
-
30sec
-
40sec
-
50sec
-
60sec
-
70sec
Pre-bake Temp. VS Removability
| Sample | Dissolution rate for NMP (Å/s) | |
|---|---|---|
| 180℃ bake | 140℃ bake | |
| BLX | 7.6 | 27.9 |
| Other maker product | 8.0 | N/A |
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Case: under-layer thickness = 2,500Å
| Sample | Complete dissolution time for NMP (s) | |
|---|---|---|
| 180℃ bake | 140℃ bake | |
| BLX | 329 | 90 |
| Other maker product | 312 | N/A |
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*Competitor's products cause intermixing with the upper layer during low temperature baking , and cannot be remove or be disolved.


[Average film thickness] 8,071Å
[Average film thickness] 7,858Å