Contract development and processing services

We accept contract development and processing to reach the shape and surface accuracy suitable for your request.
For example, surface and edge processing of various works.

Other

  • We will respond to your needs.ex) Small lot trial production to mass production, supply of consumables, polishing equipment, process, technology, etc.
  • Specialized process technology development staff is available from development
  • We have extensive evaluation equipment, so we can check and evaluate quality before and after processing.
  • Mirror finishing of difficult-to-cut materials such as titanium and SiC is also available.

Contract development and processing services

Processing target

Material Processing target Processing content Corresponding size
・Various semiconductor substrates(Si, SiC, GaN, GaAs, sapphire, LiTaO3,(LiNbO3, SiN, AlN, SiN, various composite materials, etc.) ・Solar cell substrate
・Various metal substrates(Cu, Al, SUS, Ti, Au, Ag, W, etc.)
・Various glass substrates(Quartz, Pyrex glass, tempered glass,Soda glass, etc.)
・Various resin substrates
  • Edge
    (Bevel Notch Orifla)
  • Beveling
  • trimming
  • Polishing
 Φ2 inch to 300 mm
  • Front and back
  • Wrap
  • Polishing
 ～Φ4inch
～□300mm
  • Various cylindrical materials (Al, SUS, various alloys, rubber,Resin material, DLC film, Cr film, etc.)
  • surface
  • Wrap
  • Polishing
 Diameter～150mm、
Length～450mm
  • Various hoop materials（roll to roll）
  • Surface
  • Wrap
  • Polishing
Separate consultation
  • Measurement / analysis / analysis of various workpieces
  • Surface / edge
  • Measurement
 Separate consultation

Processing example

SiN substrate Sintered SiC substrate
Before processing After processing Before processing After processing
SiN substrate SiN substrate Sintered SiC substrate Sintered SiC substrate
SiN substrate SiN substrate Sintered SiC substrate Sintered SiC substrate
Ra=1156.7Å Ra=4.0Å Ra=1242.9Å Ra=3.9Å
Alumina substrate AlN substrate
Before processing After processing Before processing After processing
Alumina substrate Alumina substrate AlN substrate AlN substrate
Alumina substrate Alumina substrate AlN substrate AlN substrate
Ra=7.7Å Ra=3.2Å Ra=128.5Å Ra=18.6Å
Single crystal SiC substrate Cu film surface polishing
Before processing After processing Before processing After processing
Single crystal SiC substrate Single crystal SiC substrate Cu film surface polishing Cu film surface polishing
Single crystal SiC substrate Single crystal SiC substrate Cu film surface polishing Cu film surface polishing
Ra=41.4Å Ra=2.4Å Ra=106.9Å Ra=16.7Å
GaN substrate chamfering Chamfering of glass substrate
Before processing After processing Before processing After processing
GaN substrate chamfering GaN substrate chamfering Chamfering of glass substrate Chamfering of glass substrate
GaN substrate chamfering GaN substrate chamfering Chamfering of glass substrate Chamfering of glass substrate
Crystal abnormal Si wafer chamfering Chamfering of SiC wafer
Before processing After processing Before processing After processing
Crystal abnormal Si wafer chamfering Crystal abnormal Si wafer chamfering Chamfering of SiC wafer Chamfering of SiC wafer
Crystal abnormal Si wafer chamfering Crystal abnormal Si wafer chamfering Chamfering of SiC wafer Chamfering of SiC wafer
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