Advanced Semiconductor Process Chemicals
(Intermediate process, post-process)
In the advanced semiconductor industry, metal wiring is generally formed by photolithography. The materials used vary depending on the process. In the front-end process, positive liquid resist and dry etching methods are used, and chemical cleaning after dry etching is also necessary. In the intermediate and back-end processes, the use of thick film dry film resist (DFR) has been increasing in recent years, and Nagase is focusing on the development and sales of DFR release agents.
The advanced semiconductor industry demands high cleaning and release performance, while at the same time requiring reduced corrosion and damage to various materials and components, often requiring performance that is normally incompatible. We are able to resolve trade-offs and offer chemical solutions that combine multiple performance requirements.
Chemicals lineup by Advanced Semiconductor Process Chemicals
- ・ BARC Stripper
- ・ Cu, Al residue remover
- ・ MHM with residue remover
- ・ MHM Etchant
- ・ Pad cleaning solution
- ・ DFR stripper
- ・ Thick film resist stripper
- ・ Low CD loss Cu etchant
- ・ Ti etchant
- ・ SnAg rework solution
- ・ PI Dissolving Solution
- ・ DFR stripper
- ・ Cu etchant
- ・ Other Various metal etchants
- ・ Post-dicing cleaning solution
- ・ PI Dissolving Solution
- ・ MC Dissolving Solution
Please inquire about chemical solutions for front-end processes (e.g., stripper, pad cleaning solution, etchant, etc.)
and other chemicals.
(Including products in development stage)
※MHM：Metal Hard Mask PI：polyimide MC：Molding Compound
Chemicals lineup by semiconductor semi-additive process
Several photolithographic processes are used in the semiconductor manufacturing process. Typical examples are processes using dry etching and plating. Below are examples of semi-additive (SAP) processes that use plating, as well as examples of strippers and etchants used in the processes.
patterning (decasm)
N-SC Series
High dissolution and removability for DFR and low damage (Cu, SnAg, PI, MC etc.)
N-CE Series
- ・ Uniform etching property
- ・ Low CD loss
- ・ long bath life
N-TE Series (Inquiry required)
- ・ Uniform etching property
- ・ Low CD loss
- ・ long bath life
Please inquire about chemical solutions for front-end processes (e.g., stripper, pad cleaning solution, etchant, etc.) and other chemicals. (Including products in development stage)
Product Information
Stripper for Dry film photoresist N-SC238
N-SC238 is a dry film type negative resist stripper used for Cu plating process, etc.
feature
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Excellent negative resist removability
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Dissolves negative resist and prevents substrate adhesion and filter clogging
-
Long bath life
-
Less damage to Cu, Ti, polyimide, etc.
-
Can be rinsed directly after removal
Process example
Dip or Shower
Dip or Shower
Example of removing
Notes.
Please read the SDS before use.
Cu etchant N-CE1
N-CE1 is an etchant for Cu seed in the plating process. It does not contain hydrogen peroxide and is extremely stable.
About N-CE series / Cu Etchant
feature
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Hydrogen peroxide free
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Excellent elapsed time stability
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Not containing PTRT, PFOS, PFOS applicable substances
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Non-toxic, non-hazardous materials
Application example
(Cu Redistribution Layer, RDL)
Example of processing conditions
Shower or Dip
Shower
Basic performance
| Cu | Ti | |
|---|---|---|
| Etching rate (40°C) |
25 | <1 |